| 1. | Influence of hole buffer layer cupc on properties of organic light - emitting devices
效应及氮在其中的作用 |
| 2. | The middle class is a buffer layer in the structure of social interests
中间阶层是社会利益结构中的缓冲层。 |
| 3. | Adds a buffering layer to read and write operations on another stream
将缓冲层添加到另一个流上的读取和写入操作。 |
| 4. | Morphology of low temperature buffer layers and its influence on inp epilayer growth
低温缓冲层的表面形貌及对其外延层生长的影响 |
| 5. | Study on transmittance of zno based on transparent thin - film transistor with complex insulative buffer layer of al2o3 aln
附银二氧化钛光催化剂的制备及其光催化活性研究 |
| 6. | The product is separated from the principle of suction by the absorption layer , a buffer layer , integrated sound insulation layer formed
该产品采用外隔内吸的原理，由吸声层，缓冲层，隔声层综合而成。 |
| 7. | ( 3 ) the effects of growth pressure of buffer layer on the growth of buffer layer and gan epitaxy , and the morphological evolution during high temperature growth have been investigated
( 3 )研究缓冲层生长压力对缓冲层生长、外延层生长及形貌变化的影响。 |
| 8. | It was found that there exist many nanometer - sized holes on the surface of sin buffer layers , and such porous sin layers probably could enhance the lateral growth
在氮化矽缓冲层表面可以发现许多奈米尺寸大小的孔洞，其特性相信可提升之后氮化镓侧向的磊晶成长。 |
| 9. | With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以优化的缓冲层生长条件得到质量有明显改善的gan外延层， gan薄膜的( 0002 )面双晶dc - xrd扫描的半高宽为6arcmin 。 |
| 10. | Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。 |
